Description

RIR120CMF080B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF080B4N is a robust and efficient 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-frequency power conversion in demanding industrial, energy and electrification applications. With a low 80 mΩ on-state resistance, the device delivers reliable switching performance while helping reduce conduction losses in high-voltage power systems.

Designed for durability and long-term operation in harsh environments, the RIR120CMF080B4N incorporates a fast intrinsic body diode with low reverse recovery, strong avalanche capability and a maximum junction temperature of 175°C. These characteristics ensure stable and efficient operation in applications where reliability and thermal performance are critical.

Supplied in a TO-247-4L (Notch) package, the device provides excellent thermal handling and high current capability while complying with Pb-free, halogen-free and RoHS environmental standards.

Key Features

• 1200V drain-source voltage rating for high-voltage power systems

• Low 80 mΩ RDS(on) @ Tj = 25°C to reduce conduction losses

• High switching speed with low gate charge for improved efficiency

• Fast intrinsic body diode with low reverse recovery characteristics

• Robust avalanche capability, 100% avalanche tested

• Continuous drain current up to 32A @ 25°C

• High temperature capability with maximum junction temperature of 175°C

• TO-247-4L (Notch) package for efficient heat dissipation

• Pb-free, halogen-free and RoHS compliant

Benefits

• Enhances overall system efficiency through reduced switching and conduction losses

• Enables higher switching frequencies and more compact power designs

• Supports increased power density in demanding applications

• Reduces cooling requirements and thermal management costs

• Improves long-term reliability in high-voltage environments

• Helps lower total system cost through improved efficiency

Applications

The RIR120CMF080B4N SiC MOSFET is well suited for:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Maximum drain-source voltage (VDS): 1200V

• Gate-source voltage (VGS): -10V to +22V

• Recommended operating gate voltage: -5…-3V / +18V

• Continuous drain current (ID @ 25°C): 32A

• Continuous drain current (ID @ 100°C): 22A

• Pulsed drain current (IDM): 79A

• Power dissipation (PD @ 25°C): 150W

• Derating above 25°C: 1.0 W/°C

• Maximum junction temperature: 175°C

• Operating and storage temperature: -55°C to +175°C

• Lead soldering temperature: 260°C (10s, 1/8” from case)

• Package type: TO-247-4L (Notch)

• Qualification level: Industrial

Ordering Information

• Part number: A-RIR120CMF080B4N

• Package: TO-247-4L (Notch)

• Shipping media: Supplied in tubes of 30 units

• Standard pack quantity: 30 units

• Minimum order quantity: 30 units

• Qualification: Industrial grade

Note: This product is supplied exclusively in manufacturer tubes containing 30 devices to ensure protection during transport and efficient handling in production environments.