Description

RIR120CDS040B 1200V Silicon Carbide (SiC) Schottky Diode (40A) (1 tube of 30 units)

The RIR120CDS040B is a high-performance 1200V Silicon Carbide (SiC) Schottky Diode designed for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. Featuring zero to negligible reverse recovery and a low forward voltage, this device minimises switching losses and significantly improves overall system efficiency in fast-switching power electronics.

Engineered for durability and stable operation in harsh environments, the RIR120CDS040B supports a maximum junction temperature of 175°C, offers high surge current capability, and delivers fast switching independent of temperature. These characteristics make it particularly well suited for EV charging systems, solar inverters, power factor correction stages, and industrial motor drives.

Supplied in a TO-247-2L package, the device supports excellent thermal performance and high current handling while meeting RoHS, Pb-free, and halogen-free environmental standards.

Key Features

• 1200V repetitive peak reverse voltage (VRRM) for high-voltage applications

• Silicon Carbide Schottky Barrier Diode (SBD) technology

• Zero to negligible reverse recovery for ultra-low switching losses

• Low forward voltage for high conduction efficiency

• Fast switching independent of temperature

• High surge current capability for robust operation

• Maximum junction temperature of 175°C

• TO-247-2L package for efficient thermal management

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves overall system efficiency by minimising switching losses

• Enables higher switching frequencies and smaller passive components

• Supports compact, high power density system designs

• Reduces cooling requirements and thermal management costs

• Enhances reliability in demanding operating conditions

• Lowers total system cost through improved efficiency and performance

Applications

The RIR120CDS040B SiC Schottky Diode is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Power Factor Correction (PFC) circuits

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency industrial power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Repetitive peak reverse voltage (VRRM): 1200V

• Forward current (IF @ 25°C, D = 1): 92A

• Forward current (IF @ 100°C, D = 1): 63A

• Forward current (IF @ 140°C, D = 1): 40A

• Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 227A

• Non-repetitive forward surge current (IFSM @ 10 ms, 125°C): 96A

• Repetitive forward surge current (IFRM @ 10 ms, 25°C): 164A

• Repetitive forward surge current (IFRM @ 10 ms, 125°C): 69A

• Power dissipation (Ptot @ 25°C): 450W

• Avalanche energy (EAS @ 125°C): 430 mJ

• Maximum junction temperature: 175°C

• Package type: TO-247-2L

• Qualification level: Industrial

Electrical Characteristics Summary

• Diode type: SiC Schottky Barrier Diode (SBD)

• Typical forward voltage (VF): 1.50V

• Maximum reverse current (IR): 100 μA

• Maximum junction temperature: 175°C

Ordering Information

• Part number: A-RIR120CDS040B

• Package: TO-247-2L

• Shipping media: Tubes of 30 units

• Standard pack quantity: 30

• Minimum order quantity: 30

• Qualification: Industrial grade

Note: This product is supplied exclusively in tubes of 30 units.