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RIR120CDM040B | 1200V 40A Merged PiN Schottky SiC Diode | TO-247-2L

The RIR120CDM040B is a high-performance 1200V Merged PiN Schottky (MPS) SiC Diode with a 40A rating. Combining the low switching losses of a Schottky with the high surge robustness of a PiN structure, this TO-247-2L device is ideal for EV charging, Solar inverters, and PFC circuits requiring 175°C reliability.

➡️ 1 tube of 30 units

£128.40 ex. VAT

Description

RIR120CDM040B 1200V Silicon Carbide (SiC) MPS Diode (40A) (1 tube of 30 units)

The RIR120CDM040B is a high-performance 1200V Merged PiN Schottky (MPS) Silicon Carbide Diode engineered for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. Designed with no reverse recovery current and a low forward voltage, this device minimises switching losses and enhances overall system efficiency, particularly in fast-switching power electronics.

Built for durability and reliable operation in harsh environments, the RIR120CDM040B supports a maximum junction temperature of 175°C, offers high surge current capability, and maintains fast switching performance independent of temperature. These characteristics make it ideal for modern power systems including EV charging, solar inverters, power factor correction, and industrial motor drives.

Supplied in a TO-247-2L package, the device provides excellent thermal performance and high current handling while meeting RoHS, Pb-free, and halogen-free environmental standards.


Key Features

  • 1200V repetitive peak reverse voltage (VRRM) for high-voltage power applications

  • Merged PiN Schottky (MPS) structure for improved ruggedness

  • No reverse recovery current for ultra-low switching losses

  • Low forward voltage for high conduction efficiency

  • Fast switching independent of temperature

  • High surge current capability for robust system protection

  • Maximum junction temperature of 175°C

  • TO-247-2L package for efficient thermal management

  • Pb-free, halogen-free and RoHS compliant


Benefits

  • Improves system efficiency by eliminating reverse recovery losses

  • Enables higher switching frequencies and smaller passive components

  • Supports higher power density designs

  • Reduces cooling requirements and thermal management costs

  • Enhances reliability in high-stress operating environments

  • Lowers total system cost through improved efficiency and durability


Applications

The RIR120CDM040B MPS SiC Diode is ideal for use in:

  • Solar inverters

  • EV charging stations and onboard chargers (OBC)

  • Power Factor Correction (PFC) circuits

  • Industrial motor drives

  • Induction heating and welding equipment

  • High-frequency industrial power supplies


Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

  • Repetitive peak reverse voltage (VRRM): 1200V

  • Forward current (IF @ 25°C): 40A

  • Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 225A

  • Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 191A

  • Non-repetitive peak forward current (IF Max @ 10 µs, 25°C): 1570A

  • Non-repetitive peak forward current (IF Max @ 10 µs, 150°C): 1335A

  • I²dt value @ 10 ms (25°C): 253 A²s

  • Power dissipation (Ptot @ 25°C): 556W

  • Maximum junction temperature: 175°C

  • Package type: TO-247-2L

  • Qualification level: Industrial


Ordering Information

  • Part number: A-RIR120CDM040B

  • Package: TO-247-2L

  • Shipping media: Tubes of 30 units

  • Standard pack quantity: 30

  • Minimum order quantity: 30

  • Qualification: Industrial grade

 

Note: This product is supplied exclusively in tubes of 30 units.

Find comprehensive details regarding our General Product Safety Regulation (GPSR) compliance by clicking the button below:

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