Description

RIR120CDM030B 1200V Silicon Carbide (SiC) MPS Diode (30A) (1 tube of 30 units)

The RIR120CDM030B is a high-performance 1200V Merged PiN Schottky (MPS) Silicon Carbide diode designed for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. With no reverse recovery current and a low forward voltage, this device significantly reduces switching losses while enabling higher efficiency and improved power density in fast-switching power systems.

Engineered for reliability in harsh operating environments, the RIR120CDM030B supports a maximum junction temperature of 175°C, offers high surge current capability, and provides fast switching performance independent of temperature. These characteristics make it particularly well suited to EV charging systems, solar inverters, power factor correction circuits and industrial motor drives.

Supplied in a TO-247-2L package, the device supports efficient thermal management and high current handling while meeting RoHS, Pb-free and halogen-free environmental standards.

Key Features

• 1200V repetitive peak reverse voltage (VRRM) for high-voltage power applications

• Merged PiN Schottky (MPS) Silicon Carbide diode technology

• No reverse recovery current for ultra-low switching losses

• Low forward voltage for improved conduction efficiency

• Fast switching independent of temperature

• High surge current capability for robust operation

• Maximum junction temperature of 175°C

• TO-247-2L package for excellent thermal performance

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves overall system efficiency by reducing switching losses

• Enables higher switching frequencies and smaller passive components

• Supports compact, high power density system designs

• Reduces cooling requirements and thermal management costs

• Enhances reliability in demanding operating environments

• Lowers total system cost through improved efficiency and performance

Applications

The RIR120CDM030B SiC MPS Diode is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Power Factor Correction (PFC) circuits

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency industrial power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Repetitive peak reverse voltage (VRRM): 1200V

• Forward current (IF @ 25°C): 30A

• Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 180A

• Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 153A

• Non-repetitive peak forward current (IF Max @ 10 μs, 25°C): 1340A

• Non-repetitive peak forward current (IF Max @ 10 μs, 150°C): 1139A

• I²t value (@ 10 ms, 25°C): 162 A²s

• I²t value (@ 10 ms, 150°C): 117 A²s

• Power dissipation (Ptot @ 25°C): 429W

• Maximum junction temperature: 175°C

• Package type: TO-247-2L

• Qualification level: Industrial

Electrical Characteristics Summary

• Diode type: Merged PiN Schottky (MPS) SiC diode

• Typical forward voltage (VF): 1.39V

• Maximum reverse current (IR): 100 μA

• Maximum junction temperature: 175°C

Ordering Information

• Part number: A-RIR120CDM030B

• Package: TO-247-2L

• Shipping media: Tubes of 30 units

• Standard pack quantity: 30

• Minimum order quantity: 30

• Qualification: Industrial grade

Note: This product is supplied exclusively in tubes of 30 units.