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RIR120CDM020B | 1200V 20A Merged PiN Schottky SiC Diode | TO-247-2L

The RIR120CDM020B is a high-efficiency 1200V Merged PiN Schottky (MPS) SiC Diode with a 20A rating. Combining ultra-low switching losses with high surge current robustness, this TO-247-2L device is engineered for maximum reliability in EV charging, Solar inverters, and PFC circuits.

➡️ 1 tube of 30 units

£82.80 ex. VAT

Description

RIR120CDM020B Silicon Carbide (SiC) Schottky Diode (MPS) (1 tube of 30 units)

The RIR120CDM020B is a high-performance 1200V Merged PiN Schottky (MPS) Silicon Carbide diode engineered for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. With no reverse recovery current and low forward voltage, this device significantly reduces switching losses while enabling improved system efficiency and higher power density.

Designed for long-term reliability in harsh operating environments, the RIR120CDM020B supports a maximum junction temperature of 175°C, offers high surge current capability, and provides fast switching independent of temperature. These characteristics make it ideal for EV charging infrastructure, solar inverters, power factor correction circuits and industrial motor drive systems.

Supplied in a TO-247-2L package, the device supports efficient thermal management and high current handling while meeting RoHS, Pb-free and halogen-free environmental standards.


Key Features

  • 1200V repetitive peak reverse voltage (VRRM) for high-voltage power applications

  • Merged PiN Schottky (MPS) Silicon Carbide diode technology

  • No reverse recovery current for ultra-low switching losses

  • Low forward voltage for improved conduction efficiency

  • Fast switching independent of temperature

  • High surge current capability for robust operation

  • Maximum junction temperature of 175°C

  • TO-247-2L package for excellent thermal performance

  • Pb-free, halogen-free and RoHS compliant


Benefits

  • Improves system efficiency by reducing switching losses

  • Enables higher switching frequencies and smaller passive components

  • Supports compact, high power density designs

  • Reduces cooling requirements and thermal management costs

  • Enhances reliability in demanding industrial environments

  • Lowers total system cost through improved efficiency and durability


Applications

The RIR120CDM020B SiC MPS Diode is ideal for use in:

  • Solar inverters

  • EV charging stations and onboard chargers (OBC)

  • Power Factor Correction (PFC) circuits

  • Industrial motor drives

  • Induction heating and welding equipment

  • High-frequency industrial power supplies


Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

  • Repetitive peak reverse voltage (VRRM): 1200V

  • Forward current (IF @ 25°C): 20A

  • Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 135A

  • Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 115A

  • Non-repetitive peak forward current (IF Max @ 10 μs, 25°C): 1180A

  • Non-repetitive peak forward current (IF Max @ 10 μs, 150°C): 980A

  • I²t value (@ 10 ms, 25°C): 91 A²s

  • I²t value (@ 10 ms, 150°C): 66 A²s

  • Power dissipation (Ptot @ 25°C): 273W

  • Maximum junction temperature: 175°C

  • Package type: TO-247-2L

  • Qualification level: Industrial


Electrical Characteristics Summary

  • Diode type: Merged PiN Schottky (MPS) SiC diode

  • Typical forward voltage (VF): 1.39V

  • Maximum reverse current (IR): 100 μA

  • Maximum junction temperature: 175°C


Ordering Information

  • Part number: A-RIR120CDM020B

  • Package: TO-247-2L

  • Shipping media: Tubes of 30 units

  • Standard pack quantity: 30

  • Minimum order quantity: 30

  • Qualification: Industrial grade

 

Note: This product is supplied exclusively in tubes of 30 units.

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