Description

RIR120CDM010B 1200V Silicon Carbide (SiC) MPS Diode (10A) (1 tube of 30 units)

The RIR120CDM010B is a high-efficiency 1200V Merged PiN Schottky (MPS) Silicon Carbide diode designed for high-frequency power conversion in demanding industrial and energy applications. With no reverse recovery current and low forward voltage, this device significantly reduces switching losses while improving system efficiency and power density.

Engineered for robust operation in harsh environments, the RIR120CDM010B supports a maximum junction temperature of 175°C, offers strong surge current capability, and delivers fast switching performance independent of temperature. These characteristics make it well suited for use in solar inverters, EV charging infrastructure, power factor correction circuits and industrial motor drive systems.

Supplied in a TO-247-2L package, the device provides excellent thermal performance and reliable high-current handling while meeting RoHS, Pb-free and halogen-free environmental standards.

Key Features

• 1200V repetitive peak reverse voltage (VRRM) for high-voltage applications

• Merged PiN Schottky (MPS) Silicon Carbide diode technology

• No reverse recovery current for extremely low switching losses

• Low forward voltage for improved conduction efficiency

• Fast switching independent of temperature

• High surge current capability for rugged operation

• Maximum junction temperature of 175°C

• TO-247-2L package for efficient thermal management

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves overall system efficiency by reducing switching and conduction losses

• Enables higher switching frequencies and smaller passive components

• Supports compact, high power density designs

• Reduces cooling requirements and thermal management costs

• Enhances system reliability in demanding environments

• Lowers total system cost through improved efficiency and durability

Applications

The RIR120CDM010B SiC MPS Diode is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Power Factor Correction (PFC) circuits

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency industrial power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Repetitive peak reverse voltage (VRRM): 1200V

• Forward current (IF @ 25°C): 10A

• Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 79A

• Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 67A

• Non-repetitive peak forward current (IF Max @ 10 μs, 25°C): 810A

• Non-repetitive peak forward current (IF Max @ 10 μs, 150°C): 690A

• I²t value (@ 10 ms, 25°C): 31 A²s

• I²t value (@ 10 ms, 150°C): 23 A²s

• Power dissipation (Ptot @ 25°C): 153W

• Maximum junction temperature: 175°C

• Package type: TO-247-2L

• Qualification level: Industrial

Electrical Characteristics Summary

• Diode type: Merged PiN Schottky (MPS) SiC diode

• Typical forward voltage (VF): 1.39V

• Maximum reverse current (IR): 100 μA

• Maximum junction temperature: 175°C

Ordering Information

• Part number: RIR120CDM010B

• Package: TO-247-2L

• Shipping media: Tubes of 30 units

• Standard pack quantity: 30

• Minimum order quantity: 30

• Qualification: Industrial grade

Note: This product is supplied exclusively in tubes of 30 units.