Description

RIR120CMF060B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF060B4N is a high-performance 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for efficient, high-frequency power conversion in demanding industrial and energy systems. With a low 60 mΩ on-state resistance, this device helps reduce conduction losses while enabling fast switching and improved system efficiency.

Engineered for reliability under high-voltage and high-temperature conditions, the RIR120CMF060B4N features a fast intrinsic body diode with low reverse recovery, robust avalanche capability and a maximum junction temperature of 175°C. These characteristics make it ideal for harsh operating environments where performance, efficiency and durability are critical.

Housed in a TO-247-4L (Notch) package, the device supports excellent thermal performance and high current handling while meeting Pb-free, halogen-free and RoHS environmental standards.

Key Features

• 1200V drain-source voltage rating for high-voltage power applications

• Low 60 mΩ RDS(on) @ Tj = 25°C to minimise conduction losses

• High switching speed with low gate charge for improved efficiency

• Fast intrinsic body diode with low reverse recovery

• Robust avalanche capability, 100% avalanche tested

• Continuous drain current up to 48A @ 25°C

• Maximum junction temperature of 175°C

• TO-247-4L (Notch) package for efficient thermal management

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves system efficiency by reducing switching and conduction losses

• Supports higher switching frequencies and compact power designs

• Enables increased power density in demanding applications

• Reduces cooling requirements and thermal management effort

• Helps lower overall system cost through efficiency and reliability

Applications

The RIR120CMF060B4N SiC MOSFET is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Maximum drain-source voltage (VDS): 1200V

• Gate-source voltage (VGS): -10V to +22V

• Recommended operating gate voltage: -5…-3V / +18V

• Continuous drain current (ID @ 25°C): 48A

• Continuous drain current (ID @ 100°C): 34A

• Pulsed drain current (IDM): 121A

• Power dissipation (PD @ 25°C): 263W

• Derating above 25°C: 1.8 W/°C

• Maximum junction temperature: 175°C

• Operating and storage temperature: -55°C to +175°C

• Lead soldering temperature: 260°C (10s, 1/8” from case)

• Package type: TO-247-4L (Notch)

• Qualification level: Industrial

Ordering Information

• Part number: RIR120CMF060B4N

• Package: TO-247-4L (Notch)

• Shipping media: Supplied in tubes of 30 units

• Standard pack quantity: 30 units

• Minimum order quantity: 30 units

• Qualification: Industrial grade

Note: This product is supplied exclusively in manufacturer tubes containing 30 devices to ensure safe handling, transport protection and efficient stock management.