Description

RIR120CMF040B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF040B4N is a high-efficiency 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-frequency, high-power switching in demanding industrial and energy systems. With a low on-state resistance of 40 mΩ, it delivers reduced conduction losses, faster switching performance and improved overall system efficiency.

Built for reliability in harsh environments, the device features a fast intrinsic body diode with low reverse recovery and strong avalanche capability, with every unit 100% avalanche tested. Its high maximum junction temperature of 175°C supports stable operation under heavy electrical and thermal stress.

Housed in a TO-247-4L (Notch) package, the RIR120CMF040B4N enables efficient thermal management and high current handling, making it ideal for renewable energy systems, EV charging infrastructure and industrial power conversion.

Key Features

• 1200V drain-source voltage rating for high-voltage applications

• Low 40 mΩ RDS(on) @ Tj = 25°C for reduced conduction losses

• High switching speed with low gate charge

• Fast intrinsic body diode with low reverse recovery

• Robust avalanche capability with 100% avalanche testing

• High continuous drain current capability

• Maximum junction temperature of 175°C

• TO-247-4L (Notch) package for excellent thermal performance

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves overall system efficiency

• Enables higher switching frequencies

• Supports higher power density designs

• Reduces cooling requirements

• Lowers total system cost

Applications

The RIR120CMF040B4N SiC MOSFET is ideal for:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating and welding equipment

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Maximum drain-source voltage (VDSS): 1200V

• Gate-source voltage (VGS): -10V to +22V

• Recommended operating gate voltage: -5 to -3V / +18V

• Continuous drain current (ID @ 25°C): 62A

• Continuous drain current (ID @ 100°C): 44A

• Pulsed drain current (IDM): 155A

• Power dissipation (PD @ 25°C): 288W

• Power dissipation derating: 1.9 W/°C above 25°C

• Maximum junction temperature (TJ): 175°C

• Storage temperature range: -55°C to +175°C

• Lead temperature for soldering: 260°C (10s, 1/8″ from case)

Ordering Information

• Part number: A-RIR120CMF040B4N

• Package: TO-247-4L (Notch)

• Qualification: Industrial grade

• Shipping media: 30 units per tube

• Standard pack quantity: 30

• Minimum order quantity: 30

Note: This product is supplied exclusively in manufacturer tubes containing 30 devices to ensure safe handling, transport protection and efficient inventory management.