Description

RIR120CMF031B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF031B4N is a high-performance 1200V N-Channel Silicon Carbide (SiC) MOSFET engineered for efficient, high-frequency power conversion in demanding industrial and energy applications. With a low RDS(on) of 31 mΩ, this device delivers excellent switching performance while minimising conduction losses, making it ideal for high-voltage systems requiring reliability and thermal efficiency.

Designed for robust operation, the RIR120CMF031B4N features a fast intrinsic diode with low reverse recovery, strong avalanche capability and a maximum junction temperature of 175°C. These characteristics enable dependable performance in harsh environments such as EV charging infrastructure, solar power conversion and industrial motor control systems.

Supplied in a TO-247-4L (Notch) package, the device supports efficient thermal dissipation and high current handling, while meeting modern environmental standards including RoHS compliance, Pb-free construction and halogen-free materials.

Key Features

• 1200V drain-source voltage rating for high-voltage power systems

• Low 31 mΩ RDS(on) @ Tj = 25°C for reduced conduction losses

• High switching speed with low gate charge for improved efficiency

• Fast intrinsic body diode with low reverse recovery performance

• Robust avalanche capability, 100% avalanche tested

• High continuous drain current capability up to 74A @ 25°C

• High temperature operation with maximum junction temperature of 175°C

• TO-247-4L (Notch) package for efficient thermal performance

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves system efficiency by reducing switching and conduction losses

• Enables higher switching frequencies for compact power electronics design

• Supports higher power density in demanding industrial applications

• Reduces cooling requirements and thermal management costs

• Lowers total system cost through improved performance and reliability

Applications

The RIR120CMF031B4N SiC MOSFET is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency power supplies

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Maximum drain-source voltage (VDS): 1200V

• Continuous drain current (ID @ 25°C): 74A

• On-state resistance RDS(on) @ Tj = 25°C: 31 mΩ

• Maximum junction temperature: 175°C

• Package type: TO-247-4L (Notch)

• Qualification level: Industrial

Ordering Information

• Package: TO-247-4L (Notch)

• Shipping media: 30 units per tube

• Qualification: Industrial grade