Description

RIR120CMF021B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF021B4N Silicon Carbide (SiC) MOSFET is a high-performance 1200V power semiconductor designed for demanding high-efficiency switching applications. Built using advanced SiC technology, this N-channel MOSFET delivers fast switching performance, low conduction losses and exceptional thermal capability, making it ideal for modern high-power conversion systems.

Engineered for industrial reliability, the device features a robust avalanche-rated structure, fast intrinsic body diode and low gate charge, enabling high-frequency operation with reduced switching losses. Its high temperature capability and excellent thermal performance help improve system efficiency, reduce cooling requirements and increase overall power density.

Supplied in a TO-247-4L package, the RIR120CMF021B4N is well suited to renewable energy, electric vehicle charging, industrial drives and high-efficiency power conversion equipment.

Key Features

• 1200V high-voltage capability for demanding power applications

• Low on-resistance of 21 mΩ for reduced conduction losses

• High switching speed with low gate charge

• Fast intrinsic diode with low reverse recovery losses

• Robust avalanche capability

• 100% avalanche tested for reliability

• High temperature operation up to 175°C junction temperature

• Pb-free, halogen-free and RoHS compliant

• Industrial-grade reliability

Performance Benefits

• Improved system efficiency

• Supports high-frequency switching operation

• Increased power density in compact designs

• Reduced cooling requirements and thermal management costs

• Lower overall system cost

• Enhanced reliability in harsh operating environments

Typical Applications

• Solar inverters and renewable energy systems

• EV charging stations and on-board chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating equipment

• Welding power supplies

• High-efficiency power conversion systems

Technical Specifications:

Absolute Maximum Ratings (TC = 25°C unless otherwise specified)

• Drain-to-source voltage (VDSS): 1200V

• Gate-to-source voltage (VGS): −10V to +22V DC

• Recommended gate operation range: −5…−3V / +18V

• Continuous drain current:

  • 97A at case temperature 25°C

  • 69A at case temperature 100°C

• Pulsed drain current: 243A

• Power dissipation: 375W at 25°C case temperature

• Power derating above 25°C: 2.5W per °C

• Operating and storage temperature range: −55°C to +175°C

• Lead soldering temperature: 260°C (10 seconds, 1/8″ from case)

Electrical Characteristics

• Maximum drain-source voltage: 1200V

• On-resistance (RDS(on), TJ = 25°C): 21 mΩ

• Maximum drain current at 25°C: 97A

• Maximum junction temperature: 175°C

• Package type: TO-247-4L Notch

• Qualification: Industrial

Ordering Information

• Package: TO-247-4L (Notch)

• Shipping media: 30 units per tube

• Standard pack quantity: 30 units

• Minimum order quantity: 30 units

• Qualification: Industrial grade