Description

RIR120CMF016B4N 1200V N-Channel Silicon Carbide (SiC) MOSFET (1 tube of 30 units)

The RIR120CMF016B4N is a high-performance 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. With an ultra-low RDS(on) of just 16 mΩ, this device significantly reduces conduction losses while enabling higher switching speeds and increased power density.

Engineered for robustness and long-term reliability, the RIR120CMF016B4N features a fast intrinsic diode with low reverse recovery, excellent avalanche capability and a maximum junction temperature of 175°C. These characteristics make it particularly well-suited to harsh operating environments such as EV charging, solar inverters and industrial power systems.

Supplied in a TO-247-4L (Notch) package, the device supports efficient thermal management and high current handling while meeting RoHS, Pb-free and halogen-free environmental standards.

Key Features

• 1200V drain-source voltage rating for high-voltage power applications

• Ultra-low 16 mΩ RDS(on) @ Tj = 25°C to minimise conduction losses

• High switching speed with low gate charge for improved efficiency

• Fast intrinsic body diode with low reverse recovery performance

• Robust avalanche capability, 100% avalanche tested

• High continuous drain current capability up to 129A @ 25°C

• High temperature operation with a maximum junction temperature of 175°C

• TO-247-4L (Notch) package for excellent thermal performance

• Pb-free, halogen-free and RoHS compliant

Benefits

• Improves overall system efficiency by reducing switching and conduction losses

• Enables higher switching frequencies, allowing smaller magnetics

• Supports higher power density designs in compact systems

• Reduces cooling requirements and thermal management costs

• Lowers total system cost through improved efficiency and reliability

Applications

The RIR120CMF016B4N SiC MOSFET is ideal for use in:

• Solar inverters

• EV charging stations and onboard chargers (OBC)

• Online and industrial UPS systems

• Industrial motor drives

• Induction heating and welding equipment

• High-frequency power supplies

Absolute Maximum Ratings

(TC = 25°C unless otherwise specified)

• Maximum drain-source voltage (VDS): 1200V

• Continuous drain current (ID @ 25°C): 129A

• On-state resistance RDS(on) @ Tj = 25°C: 16 mΩ

• Maximum junction temperature: 175°C

• Package type: TO-247-4L (Notch)

• Qualification level: Industrial

Ordering Information

• Part number: A-RIR120CMF016B4N

• Package: TO-247-4L (Notch)

• Shipping media: 30 units per tube

• Minimum order quantity: 30 units

• Qualification: Industrial grade

Note: This product is supplied exclusively in manufacturer tubes containing 30 devices to ensure protection during transport and efficient handling in production environments.